ELECTROCHEMICAL PREPARATION AND CHARACTERIZATION OF COPPER INDIUM DISELENIDE THIN-FILMS

被引：14

作者：

JEYAKUMAR, R ^{[1
]}

RAMAMURTHY, S ^{[1
]}

JAYACHANDRAN, M ^{[1
]}

CHOCKALINGAM, MJ ^{[1
]}

机构：

[1] GANDHIGRAM RURAL INST,DEPT PHYS,TAMIL NADU 624302,INDIA

来源：

MATERIALS RESEARCH BULLETIN | 1994年 / 29卷 / 02期

关键词：

COPPER; INDIUM; DISELENIDE;

D O I：

10.1016/0025-5408(94)90140-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin polycrystalline CuInSe2 films were cathodically deposited on titanium and SnO2 coated glass at potentials ranging from -350 MV to -750 mV vs SCE from aqueous sulphate bath using citric acid as complexing agent. The films were annealed at 425-degrees-C in an argon atmosphere and characterised by X-ray diffraction and EPMA. From the XRD analysis the structure of the film was found to be tetragonal. The composition of the as deposited film was found to be 1:1:2 by EPMA. From the optical studies the band gap was found to be 1.02 eV. All the as deposited films were found to be p-type. On post heat treatment at 425-degrees-C the films deposited at or above -650 mV changed to n-type whereas below -650 mV p-type films only were obtained.

引用

页码：195 / 202

页数：8

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