ELECTRON-ELECTRON SCATTERING IN NONDEGENERATE SEMICONDUCTORS ... COMMENT

被引：4

作者：

COMBESCOT, M

COMBESCOT, R

机构：

来源：

PHYSICAL REVIEW LETTERS | 1987年 / 59卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.59.375

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：375 / 375

页数：1

相关论文

共 4 条

[1] CONDUCTIVITY RELAXATION-TIME DUE TO ELECTRON-HOLE COLLISIONS IN OPTICALLY-EXCITED SEMICONDUCTORS [J].

COMBESCOT, M ;

COMBESCOT, R .

PHYSICAL REVIEW B, 1987, 35 (15) :7986-7992

[2] CURRENT RELAXATION PROCESSES IN HIGHLY EXCITED SEMICONDUCTORS [J].

COMBESCOT, M .

SOLID STATE COMMUNICATIONS, 1987, 62 (08) :587-590

[3]

LANDAU LD, 1965, QUANTUM MECHANICS NO

[4] ELECTRON-ELECTRON SCATTERING IN NONDEGENERATE SEMICONDUCTORS - DRIVING THE ANISOTROPIC DISTRIBUTION TOWARD A DISPLACED MAXWELLIAN [J].

WINGREEN, NS ;

STANTON, CJ ;

WILKINS, JW .

PHYSICAL REVIEW LETTERS, 1986, 57 (08) :1084-1087