ONE-ELECTRON ENERGY-BANDS OF SILICON DIOXIDE IN THE IDEAL BETA-CRISTOBALITE STRUCTURE

被引：38

作者：

SCHNEIDER, PM ^{[1
]}

FOWLER, WB ^{[1
]}

机构：

[1] LEHIGH UNIV,SHERMAN FAIRCHILD LAB,BETHLEHEM,PA 18015

来源：

PHYSICAL REVIEW B | 1978年 / 18卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.18.7122

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7122 / 7133

页数：12

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