ORIENTATION DEPENDENCE OF NORMAL-TYPE GAAS INTRINSIC AVALANCHE RESPONSE-TIME

被引：6

作者：

BERENZ, JJ ^{[1
]}

KINOSHITA, J ^{[1
]}

HIERL, TL ^{[1
]}

LEE, CA ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 05期

关键词：

Gallium arsenide; III-V semiconductors; Impact ionisation;

D O I：

10.1049/el:19790107

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The intrinsic avalanche response time of n-type GaAs has been measured for each of the three principal crystallographic orientations: 〈100〉, 〈 110〉 and 〈111〉. The experimental response times are compared with theoretical values computed using the most recent ionisation-rate data. The 〈 111〉 orientation is found to have the shortest response time and the 〈110〉 has the longest response time, for a nominal net donor density of 4.5 × 1016 cm−3.© 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：150 / 152

页数：3

共 8 条

[1] THRESHOLD ENERGIES FOR ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN SEMICONDUCTORS [J].