POLYCRYSTALLINE SILICON BY GLOW-DISCHARGE TECHNIQUE

被引：20

作者：

MORIN, F

MOREL, M

机构：

[1] Centre National d'Etudes des Télécommunications

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 09期

关键词：

D O I：

10.1063/1.91254

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polycrystalline silicon was obtained by glow discharge decomposition of silane on heated amorphous substrates. The influence of substrate temperature on crystalline structure and electrical conductivity of silicon films was investigated. Textured polycrystalline films were obtained above 450°C.

引用

页码：686 / 687

页数：2

共 12 条

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