ON THE DELINEATION OF P-N JUNCTIONS IN SILICON

被引:16
作者
ILES, PA
COPPEN, PJ
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D O I
10.1063/1.1722982
中图分类号
O59 [应用物理学];
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页码:1514 / 1514
页数:1
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共 3 条
[1]   THE USE OF AN INTERFERENCE MICROSCOPE FOR MEASUREMENT OF EXTREMELY THIN SURFACE LAYERS [J].
BOND, WL ;
SMITS, FM .
BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (05) :1209-1221
[2]  
FULLER CS, 1956, Patent No. 2740700
[3]   2 CHEMICAL STAINS FOR MARKING P-N JUNCTIONS IN SILICON [J].
WHORISKEY, PJ .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (05) :867-868