COMPARATIVE-ANALYSIS OF GROWTH-RATE REDUCTIONS ON SHADOW MASKED SUBSTRATES

被引：9

作者：

DEVLAMYNCK, K

COUDENYS, G

DEMEESTER, P

机构：

[1] University of Gent-IMEC, Laboratory of Electromagnetism and Acoustics, B-9000 Gent

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 24期

关键词：

D O I：

10.1063/1.105766

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth on shadow masked substrates by atmospheric pressure metalorganic vapor phase epitaxy is investigated. An analytical description based on simple concepts for a complex geometry shows good agreement with the experimental results and enables the determination of quantum well thickness variations in optical waveguide structures. The growth rate reduction (or: ratio of growth rates) r(u) in the middle of the channel increases as the width-to-height ratio of the mask opening is increased.

引用

收藏

页码：3145 / 3147

页数：3

相关论文

共 9 条

[1] APPLICATION OF ORGANOMETALLIC VAPOR-PHASE EPITAXY ON PATTERNED SUBSTRATES FOR A NEW MONOLITHIC LASER WAVE-GUIDE BUTT COUPLING TECHNIQUE [J].

AZOULAY, R ;

REMIENS, D ;

MENIGAUX, L ;

DUGRAND, L .

APPLIED PHYSICS LETTERS, 1989, 54 (19) :1857-1858

[2] A CANTILEVER SHADOW MASK TECHNIQUE FOR REDUCED AREA MOLECULAR-BEAM EPITAXIAL-GROWTH [J].

BEAM, EA ;

KAO, YC ;

YANG, JY .

APPLIED PHYSICS LETTERS, 1991, 58 (02) :152-154

[3] ELECTRONIC STATES IN NARROW SEMICONDUCTING WIRES NEAR THRESHOLD [J].

DAVIES, JH .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (10) :995-1009

[4] GROWTH VELOCITY VARIATIONS DURING METALORGANIC VAPOR-PHASE EPITAXY THROUGH AN EPITAXIAL SHADOW MASK [J].

DEMEESTER, P ;

BUYDENS, L ;

VANDAELE, P .

APPLIED PHYSICS LETTERS, 1990, 57 (02) :168-170

[5] BALANCED OPERATION OF A GAINAS/GAINASP MULTIPLE-QUANTUM-WELL INTEGRATED HETERODYNE RECEIVER [J].

KOCH, TL ;

CHOA, FS ;

KOREN, U ;

GNALL, RP ;

HERNANDEZGIL, F ;

BURRUS, CA ;

YOUNG, MG ;

ORON, M ;

MILLER, BI .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (08) :577-580

[6]

Leys M. R., 1987, Chemtronics, V2, P155

[7] MORPHOLOGICAL STABILITY OF FACET GROWTH ON NONPLANAR SUBSTRATES [J].

RATSCH, C ;

ZANGWILL, A .

APPLIED PHYSICS LETTERS, 1991, 58 (04) :403-405

[8] ANALYTICAL MODELS FOR GROWTH BY METAL ORGANIC VAPOR-PHASE EPITAXY .1. ISOTHERMAL MODELS [J].

VANSARK, WGJHM ;

JANSSEN, G ;

DECROON, MHJ ;

GILING, LJ .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (01) :16-35

[9]

Volkovyskii L. I., 1965, COLLECTION PROBLEMS