SIC MOS INTERFACE CHARACTERISTICS

被引：61

作者：

BROWN, DM

GHEZZO, M

KRETCHMER, J

DOWNEY, E

PIMBLEY, J

PALMOUR, J

机构：

[1] RENSSELAER POLYTECH INST,TROY,NY 12180

[2] CREE RES INC,DURHAM,NC 27713

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 04期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1109/16.278521

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is well known that SiC can be thermally oxidized to form SiO2 layers. And Si MOSFET IC's using thermally grown SiO2 gate dielectrics are the predominant IC technology in the world today. However the SiC/SiO2 interface has not been well characterized as was the case for Si MOS in the early 1960's. This paper presents data which for the first time characterizes the SiC/SiO2 interface and explains one of the previously unexplained abnormalities observed in the characteristics of SiC MOSFET's.

引用

页码：618 / 620

页数：3

共 11 条

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