EFFECT OF INTERFACE DISORDER ON THE OPTICAL-PROPERTIES OF CDTE-CD1-XMNXTE MICROSTRUCTURES

被引：16

作者：

STIRNER, T ^{[1
]}

HARRISON, P ^{[1
]}

HAGSTON, WE ^{[1
]}

GOODWIN, JP ^{[1
]}

机构：

[1] UNIV HULL,DEPT APPL PHYS,KINGSTON HULL HU6 7RX,N HUMBERSIDE,ENGLAND

来源：

SURFACE SCIENCE | 1994年 / 313卷 / 03期

关键词：

D O I：

10.1016/0039-6028(94)90061-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

High quality CdTe/Cd1-xMnxTe quantum well structures can be routinely grown in the authors' laboratory by molecular beam epitaxy (MBE). At temperatures of approximately 2 K these structures have optical linewidths less than or similar to 3 meV for quantum well widths less than or similar to 20 angstrom. The present paper shows how information on the nature and extent of the interface roughness in such systems can be deduced from studies of the optical linewidths and Stokes' shifts.

引用

页码：417 / 426

页数：10

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