MULTIPHONON CAPTURE RATE IN SEMICONDUCTORS

被引：63

作者：

RIDLEY, BK

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(78)90200-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1319 / 1323

页数：5

共 5 条

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[3] THEORY OF LIGHT ABSORPTION AND NON-RADIATIVE TRANSITIONS IN F-CENTRES
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RHYS, A
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1950, 204 (1078): : 406 - 423
[4] MULTIPHONON, NON-RADIATIVE TRANSITION RATE FOR ELECTRONS IN SEMICONDUCTORS AND INSULATORS
RIDLEY, BK
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (11): : 2323 - 2341
[5] SCHIFF L, 1964, QUANTUM MECHANICS