OBSERVATION OF A DONOR EXCITON BAND IN SILICON

被引：56

作者：

CAPIZZI, M ^{[1
]}

THOMAS, GA ^{[1
]}

DEROSA, F ^{[1
]}

BHATT, RN ^{[1
]}

RICE, TM ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 31卷 / 09期

关键词：

D O I：

10.1016/0038-1098(79)90308-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Far-infrared transmission measurements on P-doped Si at donor concentrations below the metal-insulator transition show absorption bands from donor pairs. We identify the lowest energy band as charge transfer excitations from a donor to its neigbhor, forming excitons (D+D-) in the Mott-Hubbard gap. The results suggest that charge transfer states in complexes dominate the low-energy optical excitations as the insulator approaches the Mott density. © 1979.

引用

页码：611 / 616

页数：6

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