ELECTRONIC-STRUCTURE, MAGNETISM AND GROWTH OF ULTRATHIN FILMS OF TRANSITION-METALS

被引:5
作者
GAUTIER, F
STOEFFLER, D
机构
[1] IPCMS-GEMME (UMR 46 CNRS), Université Louis Pasteur, 67070 Strasbourg
关键词
D O I
10.1016/0304-8853(91)90295-L
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The conditions which determine the growth mode on a perfect surface are determined in terms of the electronic structure of ultrathin films and interfaces. The various contributions (elastic, structural, chemical, magnetic, ...) to the spreading energy-gamma-nu and to the interface energy gamma-1,nu are obtained at zero kelvin for one overlayer (nu = 1) of transition metal A on a transition metal B by using a tight binding model and the recursion method to get general trends. Special attention is devoted to the growth of peculiar magnetic overlayers.
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页码:10 / 14
页数:5
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