INTERBAND PHOTOCONDUCTIVITY IN LAYER SEMICONDUCTORS GASE, INSE AND GAS

被引：30

作者：

ALEKPEROV, OZ

GODJAEV, MO

ZARBALIEV, MZ

SULEIMANOV, RA

机构：

[1] Institute of Physics, Academy of Sciences of Azerbaijanian SSR, Baku, 370143 Narimanov av.

来源：

SOLID STATE COMMUNICATIONS | 1991年 / 77卷 / 01期

关键词：

D O I：

10.1016/0038-1098(91)90428-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Photoconductivity (PC) spectra of layer semiconductors (LS) GaSe, InSe and GaS in high energy region (hv >> Eg) have been studied. Fine structure of PC spectra of LS has been registered in this region due to high quality of natural layer surfaces. New properties of deep excitons in LS analogues to those of intermediate excitons in alkali halides have been observed.

引用

页码：65 / 67

页数：3

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