CHARGE TRAPPING ON DIFFERENT CUTS OF A SINGLE-CRYSTALLINE ALPHA-SIO2

被引：36

作者：

GONG, H ^{[1
]}

LEGRESSUS, C ^{[1
]}

OH, KH ^{[1
]}

DING, XZ ^{[1
]}

ONG, CK ^{[1
]}

TAN, BTG ^{[1
]}

机构：

[1] CEA,CTR ETUD BRUYERES LE CHATEL,DAM,F-91680 BRUYERES CHATEL,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 03期

关键词：

D O I：

10.1063/1.354778

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A scanning electron microscope is employed for the investigation of charging on different cuts of an alpha-SiO2. A method for the determination of trapped charges is proposed. Charging on different cuts is observed to decrease in the order of z cut, 30-degrees cut, 45-degrees cut, and 60-degrees cut of the alpha-SiO2. This phenomenon is related to permittivity, defect density, and stress of the samples. Details of the experiments and the method of charge determination are given.

引用

页码：1944 / 1948

页数：5

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