AN ATOMIC-LEVEL VIEW OF KINETIC AND THERMODYNAMIC INFLUENCES IN THE GROWTH OF THIN-FILMS

被引：39

作者：

LAGALLY, MG

机构：

[1] University of Wisconsin-Madison, Madison, WI

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 3B期

关键词：

SURFACES; STM; GROWTH; DIFFUSION; SILICON; GERMANIUM; GALLIUM ARSENIDE;

D O I：

10.1143/JJAP.32.1493

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In all crystal growth, thermodynamic and kinetic influences compete. The crystal morphology reflects this competition. In the growth of thin films, modern techniques, in particular scanning tunneling microscopy (STM), can be used to investigate quantitatively microscopic mechanisms that control the growth, by straightforward analysis of the evolving morphology. A brief review of the application of STM for this purpose is given.

引用

页码：1493 / 1501

页数：9

共 91 条

[1]

[Anonymous], 1938, ABHANDLUNGEN AK B MN

[2] STRUCTURE AND GROWTH OF CRYSTALLINE SUPERLATTICES - FROM MONOLAYER TO SUPERLATTICE [J].