INTERACTIONS IN COPTCR/SIO2 COMPOSITE THIN-FILMS

被引:14
作者
ELHILO, M [1 ]
OGRADY, K [1 ]
NGUYEN, TA [1 ]
BAUMGART, P [1 ]
SANDERS, IL [1 ]
机构
[1] IBM ADSTAR CORP,SAN JOSE,CA 95193
关键词
D O I
10.1109/20.281282
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper the behaviour of CoPtCr/SiO2 composite thin Alms with variable percentages of SiO2 (0%--> 35%) is reported. From measurements of remanence curves and interaction characterisation via the delta plot curves, films with 20%--> 24% SiO2 show a wider range of switching fields and lower magnitude of interaction in comparison with the films containing a lower concentration of SiO2
引用
收藏
页码:3724 / 3726
页数:3
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