COMPARATIVE-STUDY OF THE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION PROCESSES OF W AND MO

被引：18

作者：

LIFSHITZ, N

GREEN, ML

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 07期

关键词：

D O I：

10.1149/1.2096141

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1832 / 1836

页数：5

共 16 条

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[8] STRUCTURE OF SELECTIVE LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED FILMS OF TUNGSTEN [J].

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[9]

GREEN ML, 1987, J ELCHEM SO, V134, P85

[10] SELECTIVE LPCVD TUNGSTEN FOR CONTACT BARRIER APPLICATIONS [J].

LEVY, RA ;

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