CURRENT-VOLTAGE AND CAPACITANCE-VOLTAGE CHARACTERISTICS OF METAL/OXIDE/6H-SILICON CARBIDE STRUCTURE

被引：16

作者：

TOKURA, N ^{[1
]}

HARA, K ^{[1
]}

MIYAJIMA, T ^{[1
]}

FUMA, H ^{[1
]}

HARA, K ^{[1
]}

机构：

[1] TOYOTA CENT RES LABS INC,NAGAKUTE,AICHI 48011,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 10期

关键词：

6H-SIC; SIO2/SIC INTERFACE; THERMAL OXIDATION; CONCAVE STRUCTURE; C-V; I-V; BREAKDOWN; THRESHOLD; MOSFET;

D O I：

10.1143/JJAP.34.5567

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Current-voltage (C-V) and capacitance-voltage (C-V) characteristics of metal/SiO2/H-SiC structure fabricated on the concave surface in (000 (1) over bar)C-face 6H-SiC p/n double epitaxial wafers were studied. Breakdown field of thermally grown gate oxide and effective charge density at SiO2/6H-SiC interface on sloped surface of the metal/ oxide/semiconductor (MOS) structure were measured for the first time to be 9.2 MV/cm and 2.2-2.5 x 10(12) cm(-2) respectively, for both p- and n-epilayers. Fabricated SiC CONCAVE-MOS field-effect-transistor (FET) including the concave MOS structure achieved FET operation with blocking voltage of 250 V. Temperature dependence of the threshold voltage was -27 mV/K, which is considerably larger than the ideal value of -1.6 mV/K, due to high interface state density.

引用

页码：5567 / 5573

页数：7

共 14 条

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