NATURE OF GRAIN-BOUNDARIES AS RELATED TO CRITICAL CURRENTS IN SUPERCONDUCTING YBA2CU3O7-X

被引:27
作者
CHAN, SW
机构
[1] Materials Science Division, Henry Krumb School of Mines (HKSM), School of Engineering and Applied Science (SEAS), New York
基金
美国国家科学基金会;
关键词
INTERFACES; SUPERCONDUCTORS; ELECTRON MICROSCOPY; CRITICAL PHENOMENA; DEFECTS; TRANSPORT PROPERTIES;
D O I
10.1016/0022-3697(94)90568-1
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A representative assortment of grain boundaries and planar defects in YBa2Cu3O7-x (YBCO) from the literature together with boundaries in thin films from many-to-one epitaxy have been reviewed to relate the critical current density (J(c)) across a boundary, its energetics, its geometric description and its nanoscopic structure. As there is much evidence showing that not all high angle boundaries have detrimental effects on J(c) transport and exhibit weak-link behavior, the relevance of different types of boundaries as related to their nanoscopic structure and finally to the transboundary critical currents are emphasized. Not all high angle boundaries are the same. The various high-angle-but-low-energy boundaries can sometimes support high critical currents, for example: Sigma 3/90 degrees boundaries, Sigma 5, Sigma 17, off-Sigma 13, 45 degrees [001] tilt boundaries found in YBCO films grown under many-to-one epitaxy. The geometrical parameters can be useful to predict to some extent the energetics of the boundaries and therefore, together with a thermodynamic criterion form a useful concept to explain why some boundaries are clean and some are preferred sites for precipitation of extraneous phase(s). Translational boundaries, stacking faults, and twin boundaries are of low energies, atomically clean and have been shown to support high J(c). A nanoscopically clean boundary is a necessary but not a sufficient condition for a high transboundary J(c). In addition to the geometrical parameters, the processing conditions and other extrinsic factors can also affect the transboundary J(c). Examples are the 45 degrees-boundaries from bi-epitaxy and the 90 degrees-boundaries at substrate etched steps, both utilized as weak-link junctions.
引用
收藏
页码:1415 / 1432
页数:18
相关论文
共 48 条
[1]  
BABCOCK SE, 1990, NATURE, V347, P6289
[2]   COMMENTS ON RANGE OF APPLICABILITY OF GRAIN-BOUNDARY (SECONDARY) DISLOCATION MODEL TO HIGH ANGLE GRAIN-BOUNDARIES [J].
BALLUFFI, RW ;
TAN, TY .
SCRIPTA METALLURGICA, 1972, 6 (11) :1033-&
[3]  
BRAGINSKI AI, 1994, P HTSED WORKSHOP WHI
[4]  
CHAN S, UNPUB
[5]  
CHAN SC, IN PRESS
[6]   DEGENERATE EPITAXY, COINCIDENCE EPITAXY AND ORIGIN OF SPECIAL BOUNDARIES IN THIN-FILMS [J].
CHAN, SW .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1994, 55 (10) :1137-1145
[7]  
CHAN SW, 1985, ACTA METALL MATER, V33, P1113, DOI 10.1016/0001-6160(85)90205-6
[8]   EFFECT OF THE POST-DEPOSITION PROCESSING AMBIENT ON THE PREPARATION OF SUPERCONDUCTING YBA2CU3O7-X COEVAPORATED THIN-FILMS USING A BAF2 SOURCE [J].
CHAN, SW ;
BAGLEY, BG ;
GREENE, LH ;
GIROUD, M ;
FELDMANN, WL ;
JENKIN, KR ;
WILKINS, BJ .
APPLIED PHYSICS LETTERS, 1988, 53 (15) :1443-1445
[9]   MICROSTRUCTURE OF YBA2CU3O7-X THIN-FILMS GROWN ON SINGLE-CRYSTAL SRTIO3 [J].
CHAN, SW ;
HWANG, DM ;
NAZAR, L .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (12) :4719-4722
[10]  
CHAN SW, 1989, AIP C P, V200, P172