GEOMETRICAL STABILITY OF SHALLOW SURFACE DEPRESSIONS DURING GROWTH OF (111) AND (100) EPITAXIAL SILICON

被引：30

作者：

DRUM, CM

CLARK, CA

机构：

来源：

关键词：

D O I：

10.1149/1.2411385

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：664 / &

共 14 条

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ORR SR, UNPUBLISHED DATA