EVIDENCE AGAINST THE NEGATIVE-CHARGE-STATE MODEL FOR THE DX CENTER IN N-TYPE GAAS - REPLY

被引：19

作者：

CHADI, DJ ^{[1
]}

CHANG, KJ ^{[1
]}

WALUKIEWICZ, W ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,BERKELEY,CA 94720

来源：

PHYSICAL REVIEW LETTERS | 1989年 / 62卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.62.1923

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1923 / 1923

页数：1

共 7 条

[1] THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS [J].

CHADI, DJ ;

CHANG, KJ .

PHYSICAL REVIEW LETTERS, 1988, 61 (07) :873-876

[2] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS [J].

CHAND, N ;

HENDERSON, T ;

KLEM, J ;

MASSELINK, WT ;

FISCHER, R ;

CHANG, YC ;

MORKOC, H .

PHYSICAL REVIEW B, 1984, 30 (08) :4481-4492

[3] MOBILITY ENHANCEMENT OF MODULATION-DOPED MATERIALS BY LOW-TEMPERATURE OPTICAL ANNEALING OF SPACER-LAYER DEFECT CHARGE STATE [J].

HIGGINS, RJ ;

MARTIN, KP ;

SYPHERS, DA ;

VANVECHTEN, JA ;

PALMATEER, SC .

PHYSICAL REVIEW B, 1987, 36 (05) :2707-2712

[4] INVESTIGATION OF THE DX CENTER IN HEAVILY DOPED N-TYPE GAAS [J].

MAUDE, DK ;

PORTAL, JC ;

DMOWSKI, L ;

FOSTER, T ;

EAVES, L ;

NATHAN, M ;

HEIBLUM, M ;

HARRIS, JJ ;

BEALL, RB .

PHYSICAL REVIEW LETTERS, 1987, 59 (07) :815-818

[5] EVIDENCE AGAINST THE NEGATIVE-CHARGE-STATE MODEL FOR THE DX CENTER IN N-TYPE GAAS [J].

MAUDE, DK ;

EAVES, L ;

FOSTER, TJ ;

PORTAL, JC .

PHYSICAL REVIEW LETTERS, 1989, 62 (16) :1922-1922

[6] FORMATION OF A SUPERLATTICE OF IONIZED RESONANT DONORS OR ACCEPTORS IN SEMICONDUCTORS [J].

MYCIELSKI, J .

SOLID STATE COMMUNICATIONS, 1986, 60 (02) :165-168

[7] ELECTRON LOCALIZATION BY A METASTABLE DONOR LEVEL IN N-GAAS - A NEW MECHANISM LIMITING THE FREE-CARRIER DENSITY [J].

THEIS, TN ;

MOONEY, PM ;

WRIGHT, SL .

PHYSICAL REVIEW LETTERS, 1988, 60 (04) :361-364

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