OPTICAL SPECTROSCOPIC STUDY OF MECHANISMS IN CCL4 PLASMA-ETCHING OF SI

The emission of Si, SiCl, Cl, Cl2, CCl, Cl+, and Cl+2 has been observed in a CCl4 rf discharge in the presence of Si(100) in a plasma etching system. Spectral intensities have been recorded over a wide range of process gas flow rates and rf powers. These data have been analyzed to show that (i) SiCl emission from the à state arises through chemiluminescent reactions of metastable (1S) Si and (ii) the species which leaves the Si surface in the etching process is SiCl x (x=0, 1, or 2) rather than SiCl3 or SiCl4. To arrive at these conclusions, detailed chemical models are examined and shown quantitatively to reproduce our observed variations of emission with flow and power.