THE MERCURY-INDIUM PHOSPHIDE DIODE

被引：11

作者：

TUCK, B

HAYESGILL, BR

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 60卷 / 01期

关键词：

D O I：

10.1002/pssa.2210600126

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：215 / 223

页数：9

共 12 条

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PEART, RF .

ELECTRONICS LETTERS, 1973, 9 (04) :88-89

[3] DEPLETION CAPACITANCE AND DIFFUSION POTENTIAL OF GALLIUM PHOSPHIDE SCHOTTKY-BARRIER DIODES [J].

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[4]

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[5]

HUGHES FD, 1972, ACTA ELECTRON, V15, P43

[6] MERCURY PROBE C-U MEASUREMENTS ON GAP [J].

JAY, PR ;

TUCK, B .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 46 (01) :199-208

[7]

Rhoderick E.H., 1978, METAL SEMICONDUCTORS

[8] CAPACITANCE-VOLTAGE MEASUREMENTS WITH A MERCURY-SILICON DIODE [J].

SEVERIN, PJ ;

POODT, GJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (10) :1384-&

[9] SLOW VOLTAGE-INDUCED BARRIER HEIGHT CHANGES IN METAL-GERMANIUM SURFACE BARRIERS [J].

THANAILAKIS, A ;

NORTHROP, DC .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (11) :1776-+

[10] ELECTRICAL MEASUREMENTS ON HOMOGENEOUS DIFFUSED P-TYPE INP [J].

TUCK, B ;

ZAHARI, MD .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (18) :2473-2479

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