WIDE-STRIPE ALGALNP LASER-DIODES WITH CURRENT-BLOCKING REGION NEAR FACETS GROWN ON MISORIENTED SUBSTRATES

被引：4

作者：

HAMADA, H

SHONO, M

HONDA, S

HIROYAMA, R

MATSUKAWA, K

YODOSHI, K

YAMAGUCHI, T

机构：

[1] Semiconductor Research Center, Sanyo Electric. Co., Ltd., Hirakata, Osaka, 573

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 19期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19911067

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Wide-stripe high-power AlGaInP laser diodes (lambda-L = 659 nm) with a current-blocking region (CBR) near the facets have been successfully fabricated for the first time by MOCVD using (100) GaAs substrates with a misorientation of 7-degrees towards the (011) direction. The laser diodes show linear light output against current characteristics, in contrast with those fabricated using (100) substrates. Maximum continuous-wave light output power is achieved with 410 mW at 20-degrees-C.

引用

页码：1713 / 1715

页数：3

共 6 条

[1] SPATIAL MODE STRUCTURE OF BROAD-AREA SEMICONDUCTOR QUANTUM WELL LASERS [J].