CALCULATION OF THE AUGER LIFETIME IN PARA-TYPE HG1-XCDXTE

[1] ANTONCIK E, 1964, P PHYS SOC, V82, P337

[2] Beattie A.R., 1958, P R SOC LOND, V249, P16

[3] RECOMBINATION IN SEMICONDUCTORS BY A LIGHT HOLE AUGER TRANSITION [J]. PHYSICA STATUS SOLIDI, 1967, 19 (02): : 577 - &

[4] BEATTIE AR, 1962, J PHYS CHEM SOLIDS, V24, P1049

[5] COMPARISON OF THE DOMINANT AUGER TRANSITIONS IN P-TYPE (HG,CD)TE [J]. SOLID STATE COMMUNICATIONS, 1980, 33 (06) : 615 - 619

[6] SCALAR-VALUED AND PLANAR-VALUED CURVE FITTING USING SPLINES UNDER TENSION [J]. COMMUNICATIONS OF THE ACM, 1974, 17 (04) : 218 - 220

[7] DORNHAUS R, 1976, SOLID STATE PHYSICS

[8] AUGER-EFFECT IN HG1-XCDXTE [J]. SOLID-STATE ELECTRONICS, 1978, 21 (11-1) : 1467 - 1470

[9] BAND STRUCTURE OF INDIUM ANTIMONIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) : 249 - 261

[10] KANE EO, 1966, SEMICONDUCTORS SEMIM, V1

[1] ANTONCIK E, 1964, P PHYS SOC, V82, P337

[2] Beattie A.R., 1958, P R SOC LOND, V249, P16

[3] RECOMBINATION IN SEMICONDUCTORS BY A LIGHT HOLE AUGER TRANSITION [J]. PHYSICA STATUS SOLIDI, 1967, 19 (02): : 577 - &

[4] BEATTIE AR, 1962, J PHYS CHEM SOLIDS, V24, P1049

[5] COMPARISON OF THE DOMINANT AUGER TRANSITIONS IN P-TYPE (HG,CD)TE [J]. SOLID STATE COMMUNICATIONS, 1980, 33 (06) : 615 - 619

[6] SCALAR-VALUED AND PLANAR-VALUED CURVE FITTING USING SPLINES UNDER TENSION [J]. COMMUNICATIONS OF THE ACM, 1974, 17 (04) : 218 - 220

[7] DORNHAUS R, 1976, SOLID STATE PHYSICS

[8] AUGER-EFFECT IN HG1-XCDXTE [J]. SOLID-STATE ELECTRONICS, 1978, 21 (11-1) : 1467 - 1470

[9] BAND STRUCTURE OF INDIUM ANTIMONIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) : 249 - 261

[10] KANE EO, 1966, SEMICONDUCTORS SEMIM, V1