C-V MEASUREMENT AND MODELIZATION OF GALNAS/INP HETEROINTERFACE WITH TRAPS

被引：31

作者：

KAZMIERSKI, K

PHILIPPE, P

POULAIN, P

DECREMOUX, B

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 05期

关键词：

D O I：

10.1063/1.338042

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1941 / 1946

页数：6

共 16 条

[1] LOW-PRESSURE CVD OF III-V COMPOUNDS [J].

DUCHEMIN, JP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :753-755

[2] DEEP LEVELS IN IN0.53GA0.47AS/INP HETEROSTRUCTURES [J].

FORREST, SR ;

KIM, OK .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5738-5745

[3] IRRELEVANCE OF INTERFACE DEFECTS TO HETEROJUNCTION BAND OFFSETS [J].

KATNANI, AD ;

CHIARADIA, P ;

SANG, HW ;

BAUER, RS .

JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (01) :25-32

[4] THE TEMPERATURE-DEPENDENT DIFFUSION MECHANISM OF ZN IN INP USING THE SEMICLOSED DIFFUSION METHOD [J].

KAZMIERSKI, K ;

HUBER, AM ;

MORILLOT, G ;

DECREMOUX, B .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (05) :628-633

[5] MEASUREMENT OF ISOTYPE HETEROJUNCTION BARRIERS BY C-V PROFILING [J].

KROEMER, H ;

CHIEN, WY ;

HARRIS, JS ;

EDWALL, DD .

APPLIED PHYSICS LETTERS, 1980, 36 (04) :295-297

[6] USE OF IN-ZN-AS TERNARY SOURCES FOR THE DIFFUSION OF ZN IN GAAS BY THE SEMICLOSED-BOX METHOD [J].

LAUNAY, F ;

KAZMIERSKI, K ;

HUBER, A ;

DECREMOUX, B .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (06) :813-817

[7] A SIMPLE METHOD OF MODELING THE C-V PROFILES OF HIGH-LOW JUNCTIONS AND HETEROJUNCTIONS [J].

MISSOUS, M ;

RHODERICK, EH .

SOLID-STATE ELECTRONICS, 1985, 28 (03) :233-237

[8] A CAPACITANCE INVESTIGATION OF INGAAS/INP ISOTYPE HETEROJUNCTION [J].

OGURA, M ;

MIZUTA, M ;

ONAKA, K ;

KUKIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (10) :1502-1509

[9] DETERMINATION OF THE CONDUCTION-BAND DISCONTINUITIES OF GAAS/ALXGA1-XAS INTERFACES BY CAPACITANCE-VOLTAGE MEASUREMENTS [J].

OKUMURA, H ;

MISAWA, S ;

YOSHIDA, S ;

GONDA, S .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :377-379

[10]

PEOPLE R, 1985, APPL PHYS LETT, V43, P25

← 1 2 →