DEPOSITION OF HIGH-QUALITY SIO2 LAYERS FROM TEOS BY EXCIMER LASER

[1] DEPOSITION OF SILICON DIOXIDE FILMS AT REDUCED PRESSURE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) : 1042 - 1046

[2] A THEORETICAL-STUDY OF THE LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION OF SIO2-FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (09) : 1888 - 1893

[3] MODELING OF LOW-PRESSURE DEPOSITION OF SIO2 BY DECOMPOSITION OF TEOS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 658 - 662

[4] KEERER J, 1965, J ELECTROCHEM SOC, V112, P503

[5] KLUMP AP, 1987, EMRS P, P507

[6] SCHLOSSER EG, 1973, HETEROGENE KATALYSE, P43

[7] WANG DNK, 1987, ADV CVD TECHNOLOGY E, P712

[8] 1970, GMELIN HDB SAUERSTOF, P1000

[1] DEPOSITION OF SILICON DIOXIDE FILMS AT REDUCED PRESSURE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) : 1042 - 1046

[2] A THEORETICAL-STUDY OF THE LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION OF SIO2-FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (09) : 1888 - 1893

[3] MODELING OF LOW-PRESSURE DEPOSITION OF SIO2 BY DECOMPOSITION OF TEOS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 658 - 662

[4] KEERER J, 1965, J ELECTROCHEM SOC, V112, P503

[5] KLUMP AP, 1987, EMRS P, P507

[6] SCHLOSSER EG, 1973, HETEROGENE KATALYSE, P43

[7] WANG DNK, 1987, ADV CVD TECHNOLOGY E, P712

[8] 1970, GMELIN HDB SAUERSTOF, P1000