TRANSPORT PHENOMENA IN MIXED-VALENCE ZERO-GAP SEMIMAGNETIC HGFESE SEMICONDUCTORS

On the basis of the nondegenerate Anderson model for mixed-valence impurities an expression is found for the electrical conductivity taking into account the radical change of the energy spectrum and damping of conduction electrons resulting from the hybridization of s and d electrons and background scattering mechanisms. It is shown that within the framework of the developed theory the anomalous change in the mobility of electrons observed in HgFeSe as a result of varying iron content can be explained without recourse to the idea of formation of the Wigner crystal from Fe3+ ions at low temperatures.