LOW PHASE NOISE HETEROJUNCTION BIPOLAR-TRANSISTOR OSCILLATOR

被引：12

作者：

KHATIBZADEH, MA

BAYRAKTAROGLU, B

机构：

[1] Texas Instruments, Dallas, 13588 N. Central Expressway

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 16期

关键词：

Oscillators; Semiconductor devices and materials;

D O I：

10.1049/el:19900803

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low phase noise, heterojunction bipolar transistor (HBT) oscillator has been designed and fabricated for operation at X-band. The common emitter oscillator employs a high-Q dielectric resonator as the parallel feedback element between the base and collector terminals. Series capacitive feedback is used in the emitter to enhance the oscillator's negative output impedance. Single-sideband FM noise levels of -76dBc/Hz and - 102dBc/Hz have been achieved at 1 kHz and 10 kHz frequency offsets, respectively, for an 11 06 GHz carrier frequency. This is one of the lowest phase noise levels ever reported for an X-band solid-state transistor oscillator. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1246 / 1248

页数：3

共 9 条

[1]

AGARWAL KK, 1986, IEEE MTT S INT MICR, P95

[2]

HAYAMA N, 1988, IEEE MMTS DIGEST, P679

[3]

KHATIBZADEH MA, 1989, GAAS IC SYMPOSIUM /, P11

[4]

Kim M. E., 1988, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 10th Annual GaAs IC Symposium Technical Digest 1988 (IEEE Cat. No.88CH2599-9), P117, DOI 10.1109/GAAS.1988.11038

[5]

Madihian M., 1988, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 10th Annual GaAs IC Symposium Technical Digest 1988 (IEEE Cat. No.88CH2599-9), P113, DOI 10.1109/GAAS.1988.11037

[6]

VARIAN KR, 1986, IEEE MTTS INT MICROW, P87

[7]

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[8]

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[9]

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