LASER-INDUCED VAPOR-DEPOSITION OF SILICON

被引：68

作者：

HANABUSA, M ^{[1
]}

NAMIKI, A ^{[1
]}

YOSHIHARA, K ^{[1
]}

机构：

[1] INST MOLEC SCI,OKAZAKI 444,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 08期

关键词：

D O I：

10.1063/1.91230

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon films were deposited when silane was irradiated with a pulsed CO2 laser. This laser-induced vapor deposition occurs effectively when the laser is tuned to an absorption frequency of SiH4. Efficiency was so high that an unfocused beam of 1.3 MW/cm2 sufficed. Any thermal effects are ruled out. Deposition is induced efficiently at gas pressures above 100 Torr, indicating that a collision-aided process is involved.

引用

页码：626 / 627

页数：2

共 9 条

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