INFRARED REFLECTIVITY MEASUREMENTS ON BULK AND EPITAXIAL GASB

被引：21

作者：

PICKERING, C ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,BALDOCK,HERTFORDSHIRE,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1980年 / 13卷 / 15期

关键词：

D O I：

10.1088/0022-3719/13/15/018

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：2959 / 2968

页数：10

共 19 条

[1] STUDY OF (111) CONDUCTION BAND OF GASB [J].

AVEROUS, M ;

BOUGNOT, G ;

CALAS, J ;

CHEVRIER, J .

PHYSICA STATUS SOLIDI, 1970, 37 (02) :807-&

[2] CONDUCTION-BAND PARAMETERS IN GASB FROM HIGH-TEMPERATURE TRANSPORT MEASUREMENTS [J].

BASINSKI, J ;

WOOLLEY, JC ;

KWAN, CCY .

CANADIAN JOURNAL OF PHYSICS, 1972, 50 (11) :1068-&

[3] ENERGY BAND STRUCTURE OF GALLIUM ANTIMONIDE [J].

BECKER, WM ;

FAN, HY ;

RAMDAS, AK .

JOURNAL OF APPLIED PHYSICS, 1961, 32 :2094-&

[4]

Bozhovskaya N. V., 1973, Soviet Physics - Solid State, V14, P1627

[5] OPTICAL DETERMINATION OF THE CONDUCTION BAND STRUCTURE OF GASB [J].

CARDONA, M .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 17 (3-4) :336-338

[6] TEMPERATURE DEPENDENCE OF CARRIER CONCENTRATIONS AND CONDUCTION-BAND MINIMA SEPARATION OF GALLIUM ANTIMONIDE [J].

LIANG, CY .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) :3866-&

[7] DIRECT OPTICAL TRANSITIONS AND FURTHER EXCITON EFFECTS IN GERMANIUM [J].

MACFARLANE, GG ;

MCLEAN, TP ;

QUARRINGTON, JE ;

ROBERTS, V .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 71 (461) :863-866

[8]

MOSS TS, 1973, SEMICONDUCTOR OPTOEL, P347

[9]

MYCIELSKI J, 1974, 12TH P INT C PHYS SE, P1137

[10] AN ELECTROLYTIC POLISH AND ETCH FOR LEAD TELLURIDE [J].

NORR, MK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (05) :433-434

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