DIPOLE SCATTERING FROM ION PAIRS IN COMPENSATED SEMICONDUCTORS

被引：67

作者：

STRATTON, R

机构：

来源：

关键词：

D O I：

10.1016/0022-3697(62)90159-2

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：1011 / &

共 12 条

[1] ENERGY-LEVEL MODEL FOR HIGH-RESISTIVITY GALLIUM ARSENIDE
BLANC, J
WEISBERG, LR
[J]. NATURE, 1961, 192 (479) : 155 - &
[2] THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS
CONWELL, E
WEISSKOPF, VF
[J]. PHYSICAL REVIEW, 1950, 77 (03): : 388 - 390
[3] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM
DEBYE, PP
CONWELL, EM
[J]. PHYSICAL REVIEW, 1954, 93 (04): : 693 - 706
[4] ERDELY A, 1953, HIGHER TRANSCENDENTR, V2, P49
[5] PROPERTIES OF SEMI-INSULATING GAAS
GOOCH, CH
HOLEMAN, BR
HILSUM, C
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2069 - &
[6] IMPURITY SCATTERING IN SEMICONDUCTORS
MANSFIELD, R
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (01): : 76 - 82
[7] CONDUCTIVITY AND HALL EFFECT IN THE INTRINSIC RANGE OF GERMANIUM
MORIN, FJ
MAITA, JP
[J]. PHYSICAL REVIEW, 1954, 94 (06): : 1525 - 1529
[8] Morse P., 1953, METHODS THEORETICAL
[9] Mott NF, 1936, P CAMB PHILOS SOC, V32, P281
[10] CHEMICAL INTERACTIONS AMONG DEFECTS IN GERMANIUM AND SILICON
REISS, H
FULLER, CS
MORIN, FJ
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03): : 535 - 636