PERIODIC SURFACE RIPPLES IN LASER-TREATED ALUMINUM AND THEIR USE TO DETERMINE ABSORBED POWER

被引:66
作者
JAIN, AK
KULKARNI, VN
SOOD, DK
UPPAL, JS
机构
关键词
D O I
10.1063/1.329296
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:4882 / 4884
页数:3
相关论文
共 12 条
  • [1] ANIMESH K, 1980, NUCL INSTRUM METHODS, V168, P275
  • [2] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS
    BAERI, P
    CAMPISANO, SU
    FOTI, G
    RIMINI, E
    [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 788 - 797
  • [3] LASER MIRROR DAMAGE IN GERMANIUM AT 10.6 MU
    EMMONY, DC
    HOWSON, RP
    WILLIS, LJ
    [J]. APPLIED PHYSICS LETTERS, 1973, 23 (11) : 598 - 600
  • [4] FERRIS SD, 1979, 1978 LAS SOL INT LAS
  • [5] GOLDSMITH A, 1961, HDB THERMOPHYSICAL P, V1, P43
  • [6] CO2 LASER-PRODUCED RIPPLE PATTERNS ON NIXP1-X SURFACES
    ISENOR, NR
    [J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 148 - 150
  • [7] JAIN AC, UNPUBLISHED
  • [8] PERIODIC REGROWTH PHENOMENA PRODUCED BY LASER ANNEALING OF ION-IMPLANTED SILICON
    LEAMY, HJ
    ROZGONYI, GA
    SHENG, TT
    CELLER, GK
    [J]. APPLIED PHYSICS LETTERS, 1978, 32 (09) : 535 - 537
  • [9] NEW EXPERIMENTAL-EVIDENCE OF THE PERIODIC SURFACE-STRUCTURE IN LASER ANNEALING
    ORON, M
    SORENSEN, G
    [J]. APPLIED PHYSICS LETTERS, 1979, 35 (10) : 782 - 784
  • [10] ROZGONYI GA, 1979, 1978 LAS SOL INT LAS, P457