SELF-DIFFUSION ENTROPY IN SILICON

被引：15

作者：

LANNOO, M

BOURGOIN, JC

机构：

[1] Laboratoire de Physique des Solides ISEN, 59046 Lille Cedex, 3, rue F. Baës

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 32卷 / 11期

关键词：

D O I：

10.1016/0038-1098(79)90797-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：913 / 917

页数：5

共 20 条

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PHYSICAL REVIEW B, 1975, 11 (10) :3785-3794

[6]

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[8] EFFECT OF INVARIANCE REQUIREMENTS ON ELASTIC STRAIN ENERGY OF CRYSTALS WITH APPLICATION TO DIAMOND STRUCTURE [J].

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PHYSICAL REVIEW, 1966, 145 (02) :637-&

[9]

LANNOO M, UNPUBLISHED

[10] RELAXATION ABOUT VACANCY IN DIAMOND [J].

MAINWOOD, A .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (13) :2703-2710

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