DIELECTRIC-PROPERTIES OF (BAXSR1-X)TIO3 THIN-FILMS PREPARED BY RF-SPUTTERING FOR DYNAMIC RANDOM-ACCESS MEMORY APPLICATION

被引：104

作者：

KUROIWA, T ^{[1
]}

TSUNEMINE, Y ^{[1
]}

HORIKAWA, T ^{[1
]}

MAKITA, T ^{[1
]}

TANIMURA, J ^{[1
]}

MIKAMI, N ^{[1
]}

SATO, K ^{[1
]}

机构：

[1] MITSUBISHI ELECTR CORP,MAT & ELECTR DEVICES LAB,AMAGASAKI,HYOGO 661,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 9B期

关键词：

(BAXSR1-X)TIO3; THIN FILM; RF SPUTTERING; DIELECTRIC CONSTANT; LEAKAGE CURRENT DENSITY; SIO2 EQUIVALENT THICKNESS; DRAM; CAPACITOR;

D O I：

10.1143/JJAP.33.5187

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dielectric properties of (Ba0.5Sr0.5)TiO3 and (Ba0.75Sr0.25)TiO3 thin films have been investigated, focusing on the effects of film structure and Ba/Sr compositions on the dielectric properties. Dielectric constant of the films increased with increasing grain size and with improvement in film crystallinity. For the 50-nm-thick films deposited at 660 degrees C, the dielectric constant of 400 for the (Ba0.5Sr0.5)TiO3 film is larger than that of 320 for the (Ba0.75Sr0.25) TiO3 film. This indicated that dielectric constant is affected by the ratio of Ba/Sr composition. Leakage current density of less than 1x10(-7) A/cm(2) at 1 V and SiO2 equivalent thickness of 0.38 nm are measured at 120 degrees C for 660 degrees C-deposited (Ba0.5Sr0.5)TiO3 film of 30 nm in thickness. The (Ba0.5Sr0.5)TiO3 film has the possibility for application to generations beyond 256 M bit dynamic random access memories.

引用

页码：5187 / 5191

页数：5

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MIKAMI, N ;

MAKITA, T ;

TANIMURA, J ;

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