LOW DEFECT PLANAR SOI ISLANDS ADJACENT TO SELECTIVE EPITAXIAL-GROWTH (SEG)

被引：8

作者：

KESSLER, J

NEUDECK, GW

GLENN, JL

机构：

[1] School of Electrical Engineering, Purdue University, W. Lafayette

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 28卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(95)00091-L

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The defect density of planar silicon on insulator (SOI) islands fabricated by epitaxial lateral overgrowth (ELO) are given. While the effects of the annealing on the defect density were mixed, low defect density SOI can be grown by this method where 96% of the islands were defect free. With better process procedures the defect density can be lower than the reported 1x10(3)/cm(2).

引用

页码：435 / 438

页数：4

共 4 条

[1]

Akasaka, Three-Dimensional IC Trends, Proceedings of the IEEE, 74, pp. 1703-1714, (1986)

[2]

Colinge, Hashimoto, Kamins, Chiang, Liu, Peng, Rissman, High-Speed, Low-Power, Implanted-Buried-Oxide CMOS Circuits, IEEE Elec. Dev. Lett., 7 EDL, 5, pp. 279-281, (1986)

[3]

Fossum, Choi, Sundaresan, SOI Design for Competitive CMOS VLSI, IEEE Tran. Elec. Dev., 37, 3, pp. 724-729, (1990)

[4]

Glenn, Neudeck, Subramanian, Denton, Fully Planar Method for Creating Adjacent Self-Isolating Silicon on Insulator by Epitaxial Lateral Overgrowth, Appl. Phys. Lett., 60, 4, pp. 483-485, (1992)

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