A 700-V INTERFACE IC FOR POWER BRIDGE CIRCUITS

被引：6

作者：

SCHOOFS, FACM

DUPONT, CNG

机构：

[1] Philips Research Laboratories, 5600, JA, Eindhoven

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1990年 / 25卷 / 03期

关键词：

D O I：

10.1109/4.102660

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 700-V integrated interface circuit is presented that provides the gate drive for the high-side and the ground-side power MOS transistor in an off-line half-bridge circuit. Ground separation for good intersystem electromagnetic compatibility (EMC) and a number of new provisions to alleviate control requirements towards the low-power system control section are included. © 1990 IEEE

引用

页码：677 / 683

页数：7