ANALYSIS OF RADIATIVE EFFICIENCY OF LONG WAVELENGTH SEMICONDUCTOR-LASERS

被引：9

作者：

POGUNTKE, KR

ADAMS, AR

机构：

[1] Department of Physics, University of Surrey, Guildford

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 01期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analysis of the spontaneous emission efficiency of laser diodes which yields C/B3/2 where C and B are the Auger and radiative recombination coefficients, respectively, is proposed as a measure of the fundamental band structure and is applied to the temperature and pressure dependence of unstrained 1.5-mu-m quantum well lasers.

引用

页码：41 / 42

页数：2

共 6 条

[1] BAND-STRUCTURE ENGINEERING FOR LOW-THRESHOLD HIGH-EFFICIENCY SEMICONDUCTOR-LASERS [J].

ADAMS, AR .

ELECTRONICS LETTERS, 1986, 22 (05) :249-250

[2] IMPROVED DYNAMICS AND LINEWIDTH ENHANCEMENT FACTOR IN STRAINED-LAYER LASERS [J].

GHITI, A ;

OREILLY, EP ;

ADAMS, AR .

ELECTRONICS LETTERS, 1989, 25 (13) :821-823

[3] IMPROVED PERFORMANCE DUE TO SUPPRESSION OF SPONTANEOUS EMISSION IN TENSILE-STRAIN SEMICONDUCTOR-LASERS [J].

OREILLY, EP ;

JONES, G ;

GHITI, A ;

ADAMS, AR .

ELECTRONICS LETTERS, 1991, 27 (16) :1417-1419

[4] IMPROVED 1.5-MU-M WAVELENGTH LASERS USING HIGH-QUALITY LP-OMVPE GROWN STRAINED-LAYER INGAAS QUANTUM-WELLS [J].

THIJS, PJA ;

MONTIE, EA ;

VANDONGEN, T ;

BULLELIEUWMA, CWT .

JOURNAL OF CRYSTAL GROWTH, 1990, 105 (1-4) :339-347

[5] METHOD FOR DETERMINING EFFECTIVE NONRADIATIVE LIFETIME AND LEAKAGE LOSSES IN DOUBLE-HETEROSTRUCTURE LASERS [J].

VANOPDORP, C ;

THOOFT, GW .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :3827-3839

[6]

YABLONOVITCH E, 1988, J LIGHTWAVE TECHNOL, V6, P1292

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