AN AB-INITIO MOLECULAR-ORBITAL STUDY OF SIH2+F2-]SIH2F2

被引:3
作者
AYALA, PY
SCHLEGEL, HB
机构
[1] Department of Chemistry, Wayne State University, Detroit
关键词
D O I
10.1016/0009-2614(94)87103-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The insertion of SiH2 into F2 has been studied with MP2, CCD, CISD and QCISD. For fluorine approaching syn to the silicon lone pair, the complex is 2.5 kcal/mol below reactants and the insertion barrier is 0.5 kcal/mol above reactants at QCISD/6-31G*; for the anti approach, there is no barrier (only a broad plateau) and insertion proceeds with inversion at silicon. With RQCISD, both pathways go directly to SiH2F2, but with RMP2 and RCCD, there are several structures in the SiH2F-F region of the surface that are artifacts of the level of theory.
引用
收藏
页码:410 / 415
页数:6
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