DESIGN AND FUNCTIONAL-CHARACTERISTICS OF A 3-MU-M, 254 K-BIT BLOCK REPLICATE BUBBLE MEMORY DEVICE

被引：7

作者：

BULLOCK, DC

FONTANA, RE

SINGH, SK

SEITCHIK, J

CLOSSON, A

机构：

[1] Texas Instruments Incorporated, Dallas

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 03期

关键词：

D O I：

10.1063/1.327061

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The design and operating characteristics of a quarter mega-bit, block replicate bubble memory device are reported in this paper. Replicate gate and swap gate designs are detailed. Characterization data obtained from packaged devices with computer controlled test systems show operating margins of 20 Oe from 0 to 50°C at 100 KHz rotating field frequency and 60 Oe peak triangular drive amplitude.

引用

页码：2222 / 2224

页数：3