INP MIS DIODES PREPARED BY ANODIC-OXIDATION

被引:5
作者
OTA, T
HORIKOSHI, Y
机构
[1] Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
关键词
D O I
10.1143/JJAP.18.989
中图分类号
O59 [应用物理学];
学科分类号
摘要
[No abstract available]
引用
收藏
页码:989 / 990
页数:2
相关论文
共 2 条
[1]   AN INP MIS DIODE [J].
LILE, DL ;
COLLINS, DA .
APPLIED PHYSICS LETTERS, 1976, 28 (09) :554-556
[2]   INP-SIO2 MIS STRUCTURE [J].
MESSICK, L .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (11) :4949-4951