ANNEALING BEHAVIOR OF MANGANESE AND MN-SIO THIN-FILMS

被引:4
作者
CASTRO, EM
BEYNON, J
机构
关键词
D O I
10.1016/0040-6090(80)90232-1
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:L19 / L20
页数:2
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共 6 条
[1]   TEMPERATURE COEFFICIENTS OF RESISTANCE OF METALLIC FILMS IN THE TEMPERATURE RANGE 25-DEGREES-C TO 600-DEGREES-C [J].
BELSER, RB ;
HICKLIN, WH .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (03) :313-322
[2]  
BEYNON J, UNPUBLISHED
[3]   STRUCTURAL INVESTIGATIONS OF AMORPHOUS TRANSITION ELEMENT FILMS .2. CHROMIUM, IRON, MANGANESE AND NICKEL [J].
LEUNG, PK ;
WRIGHT, JG .
PHILOSOPHICAL MAGAZINE, 1974, 30 (05) :995-1008
[4]  
MORRIS JE, 1977, THIN SOLID FILMS, V47, P1
[5]   RESISTIVITY-TEMPERATURE VARIATION OF MANGANESE AND MN-MGF2 THIN-FILMS [J].
OLUMEKOR, L ;
BEYNON, J .
THIN SOLID FILMS, 1978, 53 (03) :L9-L11
[6]   A theory of the irreversible electrical resistance changes of metallic films evaporated in vacuum [J].
Vand, V .
PROCEEDINGS OF THE PHYSICAL SOCIETY, 1943, 55 :0222-0246