ELASTIC-CONSTANTS AND RAMAN FREQUENCIES OF HEAVILY DOPED SI UNDER UNIAXIAL STRESS

被引：5

作者：

FJELDLY, TA ^{[1
]}

CERDEIRA, F ^{[1
]}

CARDONA, M ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPER FORSCH,STUTTGART 7000,WEST GERMANY

来源：

关键词：

D O I：

10.1016/0038-1098(73)90656-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：553 / 556

页数：4

共 6 条

[1] BESSERMAN R, 1972, 11 P INT C PHYS SEM, P1181
[2] STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS
CERDEIRA, F
BUCHENAUER, CJ
CARDONA, M
POLLAK, FH
[J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 580 - +
[3] CERDEIRA F, 1972, PHYS REV B, V5, P1140
[4] FJELDLY TA, 1972, 11TH P INT C PHYS SE, P245
[5] Keyes R. W., 1968, SOLID STATE PHYS, V20, P37, DOI DOI 10.1016/S0081-1947(08)60217-9
[6] PIEZO-ELECTROREFLECTANCE IN GE GAAS AND SI
POLLAK, FH
CARDONA, M
[J]. PHYSICAL REVIEW, 1968, 172 (03): : 816 - &