CONFINEMENT-ENHANCED BIEXCITON BINDING-ENERGY IN SEMICONDUCTOR QUANTUM DOTS

被引：76

作者：

KANG, KI

KEPNER, AD

GAPONENKO, SV

KOCH, SW

HU, YZ

PEYGHAMBARIAN, N

机构：

[1] UNIV ARIZONA, DEPT PHYS, TUCSON, AZ 85721 USA

[2] BI STEPANOV PHYS INST, MINSK 220072, BELARUS

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.48.15449

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Experimental observation of the ground-state biexciton transition in CdSx Se-1-x quantum dots in glass is presented in a three-beam experiment, involving a probe, a pump, and a saturating laser pulse. The observed quantum-dot biexciton ground state has a strongly enhanced binding energy compared to the bulk as theoretically predicted. The biexciton binding energy is measured as a function of quantum-dot size and the results are compared with calculations.

引用

页码：15449 / 15452

页数：4

共 14 条

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