IONIZED IMPURITY SCATTERING IN N-TYPE GERMANIUM AND N-TYPE SILICON

被引：17

作者：

ITO, R

机构：

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1963年 / 18卷 / 11期

关键词：

D O I：

10.1143/JPSJ.18.1604

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1604 / &

共 31 条

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