MOLECULAR-BEAM EPITAXY OF CDF2 LAYERS ON CAF2(111) AND SI(111)

被引：18

作者：

SOKOLOV, NS ^{[1
]}

GASTEV, SV ^{[1
]}

NOVIKOV, SV ^{[1
]}

YAKOVLEV, NL ^{[1
]}

IZUMI, A ^{[1
]}

FURUKAWA, S ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 22期

关键词：

D O I：

10.1063/1.111395

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cadmium fluoride single crystal layers have been grown on CaF2/Si(111) or Si(111) substrates by molecular beam epitaxy. The structures are expected to have attractive electronic properties. The growth was monitored by reflections high energy electron diffraction (RHEED) techniques. A distinct (square-root 3 X square-root 3) R30-degrees superstructure has been observed on the CdF2(111) surface at growth temperatures below 150-degrees-C. RHEED intensity oscillations indicate a two-dimensional growth mode of CdF2.

引用

页码：2964 / 2966

页数：3

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