QUANTITATIVE-ANALYSIS OF CHANNELING DATA FOR THE DETERMINATION OF THE AMORPHOUS FRACTION IN ION BOMBARDED SINGLE-CRYSTALS

被引：22

作者：

BENYAGOUB, A

THOME, L

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1987年 / 105卷 / 1-2期

关键词：

D O I：

10.1080/00337578708210058

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：9 / 15

页数：7

共 13 条

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[6]

EISEN FH, 1973, CHANNELING

[7] DEPTH PROFILES OF LATTICE DISORDER RESULTING FORM ION BOMBARDMENT OF SILICON SINGLE CRYSTALS [J].

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[8]

FELDMAN LC, 1982, MATERIALS ANAL ION C

[9]

HOWE LM, 1976, NUCL INSTR METH, V132

[10]

Mayer J W, 1977, ION BEAM HDB MATERIA, P67

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