NEGATIVE DIFFERENTIAL CONDUCTANCE IN GAAS/AIAS SUPERLATTICES

被引：12

作者：

HADJAZI, M ^{[1
]}

SIBILLE, A ^{[1
]}

PALMIER, JF ^{[1
]}

MOLLOT, F ^{[1
]}

机构：

[1] CNRS,F-92220 BAGNEUX,FRANCE

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 12期

关键词：

MICROWAVE OSCILLATORS; DIODES; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19910684

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Negative differential conductance has been characterised on a series of n-doped GaAs/A1As superlattices due to Esaki's negative effective mass mechanism. High electron peak velocities (up to 10(7) cm/s) were obtained together with high current densities (up to 150 kA/cm2). These preliminary results are promising for microwave applications.

引用

页码：1101 / 1103

页数：3

共 6 条

[1] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J].