Theory of semiconductor response to charged particles

被引:142
作者
Brandt, Werner
Reinheimer, Julian
机构
[1] NYU, Dept Phys, New York, NY 10003 USA
[2] Aerosp Corp, San Bernardino, CA USA
来源
PHYSICAL REVIEW B-SOLID STATE | 1970年 / 2卷 / 08期
关键词
D O I
10.1103/PhysRevB.2.3104
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The wave-number- and frequency-dependent dielectric function of a semiconductor is derived and calculated in terms of a model consisting of an electron gas with an energy gap. From it are deduced, as a function of the gap width, (i) the screening of a point defect, (ii) the annihilation rate of positrons, and (iii) the stopping power for swift charged particles. A partition rule holds between the contributions of single-particle excitations L-x and collective resonance excitations L-r to the stopping number L = L-s + L-r in the sense that L-s = C +L-r; the constant C grows with the gap width.
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页码:3104 / 3112
页数:9
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