PERFORMANCE OF VERY HIGH-DENSITY CHARGE COUPLED DEVICES

被引：11

作者：

PATRIN, NA ^{[1
]}

机构：

[1] IBM CORP,SYST PROD DIV,BURLINGTON LAB,ESSEX JUNCTION,VT 05452

来源：

关键词：

D O I：

10.1147/rd.173.0241

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：241 / 248

页数：8

共 12 条

[1] EXPERIMENTAL VERIFICATION OF CHARGE COUPLED DEVICE CONCEPT [J].

AMELIO, GF ;

TOMPSETT, MF ;

SMITH, GE .

BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (04) :593-+

[2]

Berglund C. N., 1970, International electron devices metering (abstracts)

[3] CHARGE COUPLED SEMICONDUCTOR DEVICES [J].

BOYLE, WS ;

SMITH, GE .

BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (04) :587-+

[4]

ENGLER WE, 1971, 1971 IEEE INT SOL ST, P164

[5]

KIM CK, 1972, IEEE NEREM RECORD, V14, P161

[6] ZERO LOSS TRANSFER ACROSS GAPS IN A CCD [J].

KRAMBECK, RH .

BELL SYSTEM TECHNICAL JOURNAL, 1971, 50 (10) :3169-+

[7]

LEE HS, 1972, IEEE T ELECTRON DEV, VED19, P1270

[8]

PATRIN NA, 1971, JUN IEEE DEV RES C A

[9]

PATRIN NA, 1972, IEEE NEREM RECORD, V14, P157

[10]

VADASZ L, 1966, IEEE T ELECTRON DEVI, VED13, P863